Reactive Plasma Jet High-Rate Etching of SiC
نویسندگان
چکیده
منابع مشابه
High rate etching of 4H–SiC using a SF6 ÕO2 helicon plasma
The etch rate of 4H–SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 mm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of mic...
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ژورنال
عنوان ژورنال: Plasma Processes and Polymers
سال: 2009
ISSN: 1612-8850
DOI: 10.1002/ppap.200930503